Method for production of oxidation-resistant silicon nitride mat

Details Method for production of oxidation-resistant silicon nitride mat Method for production of oxidation-resistant silicon nitride mat

1987-12-16

1989-08-01

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

156664, 156667, 427154, 4273761, 4273762, 427377, B05D 302, C01B 21063, C01B 3306

Patent

active

048532045

ABSTRACT:
An oxidation-resistant silicon nitride material possessing a surface layer of a phase of closely packed crystals is produced by a procedure which comprises covering the surface of a silicon nitride substrate with a layer of an alkali metal compound, firing the coated substrate at a temperature of between 800.degree. C. and 1,300.degree. C., thereby forming an alkali metal-containing vitreous coating layer on the surface of the silicon nitride substrate, and thereafter removing the coating layer.

REFERENCES:
patent: 3455729 (1969-07-01), Deeley et al.
patent: 4104442 (1978-08-01), Sussmuth

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