Method for production of oxidation-resistant sialon and silicon

Details Method for production of oxidation-resistant sialon and silicon Method for production of oxidation-resistant sialon and silicon

1988-01-05

1989-06-27

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

156664, 156667, 427154, 4273761, 4273762, 427377, B05G 302, C01B 3136

Patent

active

048428400

ABSTRACT:
An oxidation-resistant sialon material and an oxidation-resistant silicon carbide material each containing a phase of closely packed crystals in the surface region are produced by coating a sialon substrate and a silicon carbide substrate with a layer of an alkali metal compound and a layer of a mixture of an alkali metal compound and a carbonaceous substance respectively, firing the resultant coated substrate at a temperature in the range of 800.degree. to 1,300.degree. C. thereby forming an alkali metal-containing vitreous coating layer on each substrate, and thereafter removing the each coating layer.

REFERENCES:
patent: 4664946 (1987-05-01), Enomoto et al.

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