Method for production of free-standing polycrystalline boron pho

Chemistry of inorganic compounds – Boron or compound thereof – Binary compound

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423299, 252 623GA, 427 86, 427 87, 4274197, 156610, 156DIG70, 156DIG88, C01B 3504

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045500142

ABSTRACT:
A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

REFERENCES:
patent: 2966426 (1960-12-01), Williams et al.
patent: 3073679 (1963-01-01), Stone et al.
patent: 3223552 (1965-12-01), Sakurai et al.
patent: 3260571 (1966-07-01), Gruber
patent: 3279891 (1966-10-01), Wenzel
patent: 3340009 (1967-09-01), Wenzel et al.
patent: 3357795 (1967-12-01), Kischio
patent: 3363984 (1968-01-01), Ruehrwein
patent: 3395986 (1968-08-01), Gruber
patent: 3429756 (1969-02-01), Groves
patent: 3617371 (1971-11-01), Burmeister
patent: 3686378 (1972-08-01), Dietze
patent: 3956479 (1976-04-01), Reuschel et al.
patent: 3993533 (1976-11-01), Mihes et al.
patent: 4370288 (1983-01-01), Rice, Jr. et al.
Kirpatrick, A. R. "A Nonconventional Approach to Tnin Cell Fabrication", Conf. Record. 13th IEEE Photovoltaic Specialists Conf., Jun. 5-8, 1978, pp. 1342-1346.
Suzuki et al., "Free Boron Monophosphide Wafers", Japan. J. Appl. Phys., vol. 16 (1977), No. 6, pp. 1053-1054.
Chu et al., "Gallium Arsenide Films on Recrystallized Germanium Films", J. of Applied Physics, vol. 48, No. 11, Nov. 1977, pp. 4848-4849.
Shohno, Ohtake, and Bloem, Journal of Crystal Growth 45, 187-191, (1978).
Nishinaga et al., Japanese Journal of Applied Physics 14, 753 (1975).
Chu et al., Journal of Crystal Growth 33, 53 (1976).
Suzuki et al., Japan J. Appl. Phys. 16, 1053 (1977).
Takigawa et al., Japan J. Appl. Phys. 16, 637 (1977).
Hirai et al., Journal of Crystal Growth 41, 124 (1977).

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