Method for production of film-coated silicon semiconductor elect

Chemistry: electrical and wave energy – Processes and products

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204 72, 2041577, 252500, 252518, 427 531, C25B 300

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active

046473483

ABSTRACT:
On a silicon semiconductor or a silicon semiconductor having a coating of a noble metal, a polymer film is deposited by immersing the silicon semiconductor or the silicon semiconductor with the noble metal coating in a solution containing a thiophene compound, applying a voltage to the silicon semiconductor as an electrode and, at the same time, exposing the silicon semiconductor to light.

REFERENCES:
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patent: 4548696 (1985-10-01), Weaver
patent: 4559112 (1985-12-01), Tamamura et al.
patent: 4582587 (1986-04-01), Hotta et al.
Chem. Abstracts, vol. 102 (1985) #92246 (Abstract of Jpn Kokai 59,207,932.
J. Electrochem. Soc.-Electrochemical Sciences and Technology, vol. 128, No. 12, R. Noufi et al., "Protection of Semiconductor Photoanondes with Photoelectrochemically Generated Polypyrrole Films", pp. 2596-2599, Dec. 1981.
Berichte der Bunsen-Gesellschaft, vol. 80, No. 10, 1976, Y. Nakato et al. "A New Photovoltaic Effect Observed for Metal-Coated Semiconductor Electrodes and its Utilization for the Photolysis of Water", pp. 1002-1007.

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