Fishing – trapping – and vermin destroying
Patent
1991-11-14
1992-06-23
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 67, 437 68, 437 62, H01L 21304
Patent
active
051242745
ABSTRACT:
After the separating grooves has been formed, the polycrystalline silicon deposited as bonded to the single crystal substrate as a supporting base, and the polycrystalline silicon layer ground and polished until the oxide film in the area other than the separating grooves is exposed, the present invention etches the polycrystalline silicon layer on the separating grooves with mixed acid composed of hydrofluoric acid and nitric acid until its thickness equals that of the separating oxide film and subsequently removes the oxide film in the area other than the separating grooves with hydrofluoric acid, As a result, the otherwise inevitable occurrence of projections of polycrystalline silicon can be precluded. When the dielectric-separation substrate obtained by the present invention is used in manufacturing a semiconductor device, therefore, the occurrence of particles due to the chipping of the projections of polycrystalline silicon and the breakage of distributed wires in the produced device can be prevented.
REFERENCES:
patent: 3969168 (1976-07-01), Kuhn
patent: 4233091 (1980-11-01), Kawabe
patent: 4255207 (1981-03-01), Nicolay et al.
patent: 4269636 (1981-05-01), Rivoli et al.
Katayama Masatake
Ohki Konomu
Ohta Yutaka
Dang Trung
Hearn Brian E.
Shin-Etsu Handotai & Co., Ltd.
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