Method for production of dielectric-separation substrate

Details Method for production of dielectric-separation substrate Method for production of dielectric-separation substrate

1991-12-23

1993-02-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 62, 437228, 437 67, 437974, 437233, H01L 21302

Patent

active

051837838

ABSTRACT:
Single crystal silicon islands in a dielectric-separation substrate are separated completely and finished in a uniform thickness by preparatorily denuding a single crystal silicon substrate of a warpage suffered to occur therein.
This dielectric-separation substrate is produced by a method which comprises forming a thermal oxide film on a single crystal silicon substrate having grooves incised in advance therein, then forming an irreversibly thermally shrinkable film on the rear surface of said single crystal silicon substrate prior to depositing a polycrystalline silicon thereon, then depositing a polycrystalline silicon on said single crystal silicon substrate, and thereafter grinding said single crystal silicon substrate in conjunction with said irreversibly thermally shrinkable film.

REFERENCES:
patent: 4017341 (1977-04-01), Suzuki et al.
patent: 4567646 (1986-02-01), Ishikawa et al.
patent: 4606936 (1986-08-01), Bajor et al.
patent: 4631804 (1986-12-01), Roy
patent: 4649630 (1987-03-01), Boland et al.
patent: 5071785 (1991-12-01), Nakazato et al.

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