Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2009-01-27
2010-06-01
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C257SE21041
Reexamination Certificate
active
07727798
ABSTRACT:
Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500° C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3×1018 cm-3, and its resistivity is about 0.6 Ω-cm; consequently. The boron-doped semiconducting diamond-like carbon film having excellent semiconductor property and high temperature stability according to the invention is best applicable in solar cell or electronic communication and electrode elements and equipments.
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Hsu Fu-Ting
Hsu Kai-Hung
Hu Shao-Chung
Kan Ming-Chi
Lin Chia-Lun
Coleman W. David
Enad Christine
National Taipei University Technology
Schmeiser Olsen & Watts LLP
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