Method for production of copper indium diselenide

Details Method for production of copper indium diselenide Method for production of copper indium diselenide

1988-09-02

1990-07-10

Morgenstern, Norman

Coating processes

Electrical product produced

Photoelectric

427 74, 136264, 136265, 136256, B05D 512, H01L 3100

Patent

active

049406043

ABSTRACT:
A polycrystalline CuInSe.sub.2 film is produced by adding a liquid cooling medium to a mixture of Cu, In and Se powders, grinding the resulting composition by means of a ball-mill to provide a slurry containing CuInSe.sub.2 of low crystallinity, drying and adding a binding agent to the slurry to form a paste, coating a substrate with the paste, and sintering the paste so applied under a nitrogen atmosphere.
The starting materials that can be used are not limited to respective powders of the above-mentioned elements but may be Cu-Se and In-Se compounds and the method provides CuInSe.sub.2 of excellent quality on a mass production scale at low cost.

REFERENCES:
Kazumi et al., "Preparation of CuInX.sub.2 (X=S,Se)Films from Mixed Fine Particles of Constituent Elements", Denki Kagaku Oyobi Kogyo Butsuri Kagaku, 57(3), pp. 224-228, (Japan), 1989.
Migliorato et al., J. Appl. Phys., 46 (1975), 1777-1782.
SERI Photovoltaic Advanced Research & Development, An Overview, SERI/SP-281-2235, Feb. 1984.

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