Method for production of compound semicondutor devices

Details Method for production of compound semicondutor devices Method for production of compound semicondutor devices

1988-03-31

1990-02-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 49, 437 50, 437 58, 437176, 437236, 437240, 437912, 437944, H01L 21285, H01L 21316, H01L 21318, H01L 2980

Patent

active

049026356

ABSTRACT:
This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices.
This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching.
Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.

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patent: 4757033 (1988-07-01), Ebata
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