Method for production of a semiconductor structure

Details Method for production of a semiconductor structure Method for production of a semiconductor structure

2006-11-28

2006-11-28

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C430S312000, C430S313000

Reexamination Certificate

active

07141507

ABSTRACT:
A method for producing a semiconductor structure including preparing a semiconductor substrate, and generating a lower first, a middle second and an upper third masking layer on a surface of the semiconductor substrate. The method further includes forming at least one first window in the upper third masking layer, structuring the middle second masking layer using the first window for transferring the first window, structuring the lower first masking layer using the first window for transferring the first window, and enlarging the first window to form a second window. The method for further includes restructuring the middle second masking layer using the second window for transferring the second window, structuring the semiconductor substrate, using the structured lower third masking layer, restructuring the lower first masking layer using the second window, and restructuring the semiconductor substrate using the restructured lower third masking layer.

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