Method for production of a radiation-emitting semiconductor...

Details Method for production of a radiation-emitting semiconductor... Method for production of a radiation-emitting semiconductor...

2011-03-01

2011-03-01

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S458000, C257SE21122

Reexamination Certificate

active

07897423

ABSTRACT:
A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

REFERENCES:
patent: 3739217 (1973-06-01), Bergh et al.
patent: 6233267 (2001-05-01), Nurmikko et al.
patent: 6294475 (2001-09-01), Schubert et al.
patent: 6455340 (2002-09-01), Kneissl et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6849881 (2005-02-01), Harle et al.
patent: 2002/0031153 (2002-03-01), Niwa et al.
patent: 2003/0141506 (2003-07-01), Sano et al.
patent: 2003/0168664 (2003-09-01), Hahn et al.
patent: 2003/0173568 (2003-09-01), Asakawa et al.
patent: 2003/0183824 (2003-10-01), Doi et al.
patent: 2003/0209704 (2003-11-01), Yamada
patent: 2003/0224582 (2003-12-01), Shimoda et al.
patent: 2004/0072382 (2004-04-01), Kelly et al.
patent: 2004/0099873 (2004-05-01), Illek
patent: 2004/0113156 (2004-06-01), Tamura et al.
patent: 2004/0113167 (2004-06-01), Bader et al.
patent: 2004/0189173 (2004-09-01), Chowdhury et al.
patent: 2005/0239270 (2005-10-01), Fehrer et al.
patent: 2006/0011925 (2006-01-01), Bader et al.
patent: 2 030 974 (1971-01-01), None
patent: 196 40 594 (1998-04-01), None
patent: 102 43 757 (2001-04-01), None
patent: 100 20 464 (2001-11-01), None
patent: 100 20 464 (2001-11-01), None
patent: 100 26 254 (2001-11-01), None
patent: 100 40 448 (2002-03-01), None
patent: 100 64 448 (2002-07-01), None
patent: 102 45 628 (2004-04-01), None
patent: 10 190056 (1998-07-01), None
patent: 2002 338398 (2002-11-01), None
patent: 2003-188142 (2003-07-01), None
patent: 2004-179369 (2004-06-01), None
patent: 2003-69075 (2007-03-01), None
patent: WO 98/14986 (1998-04-01), None
patent: WO 99/67815 (1999-12-01), None
patent: WO 01/39282 (2001-05-01), None
patent: WO 03/065464 (2003-08-01), None
“InxGal-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off”, W.S. Wong, et al., Applied Physics Letters, vol. 77, No. 18, pp. 2822-2824, Oct. 30, 2000.
I. Schnitzer et al., 30% external efficiency from surface textured, thin-film light-emitting diodes, Applied Physics Letters, vol. 63, No. 18, pp. 2174-2176, Oct. 18, 1993.
T. Fujii et al., “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening”, Applied Physics Letters, vol. 84, No. 6, pp. 855-857, Feb. 9, 2004.
T. Fujii et al., “Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique”, Japanese Journal of Applied Physics, vol. 43, No. 38, pp. L411-L413, 2004.
I. Schnitzer et al., “Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures”, Applied Physics Letters, vol. 62, No. 2, pp. 131-133, Jan. 11, 1993.
Zellweger C.M. et al., “GaN-bsed single mirror light emitting diodes with high external quantum efficiency”, Physica Status Solidi A., Wiley-VCH:2003, vol. 200, No. 1, p. 75-8, (6 refs,) ISSN 0031-8965 (1 pg.).

Affiliated with

Also associated with

Rating

Method for production of a radiation-emitting semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for production of a radiation-emitting semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for production of a radiation-emitting semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2658856