Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2007-11-26
2009-12-08
Menz, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257S461000, C257S462000
Reexamination Certificate
active
07629625
ABSTRACT:
The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
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Arakawa Atsutoshi
Asahi Toshiaki
Sato Kenji
Yamamoto Tetsuya
Birch & Stewart Kolasch & Birch, LLP
Menz Laura M
Nippon Mining & Metals Co., Ltd.
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