Method for producing walled emitter type bipolar transistors

Details Method for producing walled emitter type bipolar transistors Method for producing walled emitter type bipolar transistors

1980-03-14

1982-06-08

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 148187, 357 34, 357 50, H01L 2126, H01L 21225

Patent

active

043337740

ABSTRACT:
A base region of a walled emitter type bipolar transistor is formed by an ion implantation process. During the ion implantation, insulating films are disposed on a part of a semiconductor body corresponding to an emitter region, so that the obtained profile of a base-collector junction is terraced, namely, a part of the base-collector junction which is below the insulating films is shallower than the rest of the base-collector junction.

REFERENCES:
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patent: 4175983 (1979-11-01), Schwabe
patent: 4184172 (1980-01-01), Raffel et al.
patent: 4191595 (1980-03-01), Aomura et al.
patent: 4199378 (1980-04-01), Van Gils
patent: 4199380 (1980-04-01), Farrell et al.
Wilson, P. R., Solid St. Electronics, 17 (1974) 465.
Jambotkar, G. G., IBM-TDB, 19 (1977) 4598.

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