Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2011-06-14
2011-06-14
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C257SE21122, C257SE21567
Reexamination Certificate
active
07960249
ABSTRACT:
A wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side is produced by a method comprising a step of forming a BOX oxide layer on at least one of a wafer for support substrate and a wafer for active layer, a step of bonding the wafer for support substrate and the wafer for active layer and a step of thinning the wafer for active layer, which further comprises a step of forming a plurality of concave portions on a bonding face of the BOX oxide layer to the other wafer and filling a polysilicon plug into each of the concave portions to form a composite layer before the step of bonding the wafer for support substrate and the wafer for active layer.
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patent: 2009/0309190 (2009-12-01), Nevin et al.
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Notice to File a Response mailed Mar. 9, 2011, issued in corresponding Korean Application No. 10-2009-0083990, filed Jul. 9, 2007, 6 pages.
Kurita Kazunari
Omote Shuichi
Christensen O'Connor Johnson & Kindness PLLC
Dehne Aaron A
Nguyen Ha Tran T
Sumco Corporation
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