Fishing – trapping – and vermin destroying
Patent
1994-07-19
1995-05-30
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437235, 437947, H01L 21465
Patent
active
054200784
ABSTRACT:
A method for forming via holes characterized by an isotropic etch of a dielectric surface through a mask opening by means of an acidic vapor, followed by an anisotropic etch through mask openings into the body of the dielectric surface. Preferably, the acidic vapor comprises hydrofluoric (HF) acid and a nitrogen (N.sub.2) carrier gas. The isotropic etch step undercuts the mask around the mask openings to form tapered recesses which subsequently become tapered via hole rims after the anisotropic etch step.
REFERENCES:
patent: 4372034 (1983-02-01), Bohr
patent: 4857141 (1989-08-01), Abe et al.
patent: 5057186 (1991-10-01), Chew et al.
patent: 5078832 (1992-01-01), Tanaka
Semiconductor International, Etching of SiO.sub.2 by Controlled Anhydrous HF/Vapor, 1987.
FSI International, Excalibur Gas Processing System, The Cost-Effective, Virtually Particle-Free Solution to Silicon Dioxide Removal (date unknown).
Etching of SiO.sub.2 by Controlled Anhydrous HF/Vapor J. of Semiconductor International Sep. 1989.
Bilayer Taper Etching of Field Oxides and Passivation Layers L. White, J. Electrochemical Society Dec. 1980 pp. 2687-2693.
Chaudhuri Olik
Tsai H. Jey
VLSI Technology Inc.
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