Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Reexamination Certificate
2005-09-30
2009-02-24
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
C257SE27055, C257SE27056, C438S340000, C438S342000
Reexamination Certificate
active
07495312
ABSTRACT:
A method for producing vertical bipolar transistors having different voltage breakdown and high-frequency performance characteristics on a single die comprises forming, for each of the vertical bipolar transistors, a buried collector region, and base and emitter regions above the buried collector region. The lateral extensions and locations of the base and emitter regions and of the buried collector region are, for each of the vertical bipolar transistors, selected to create an overlap between the base and emitter regions, and the buried collector region, as seen from above, wherein at least some of the overlaps are selected to be different.
REFERENCES:
patent: 5698459 (1997-12-01), Grubisich et al.
patent: 6004855 (1999-12-01), Pollock et al.
patent: 6521974 (2003-02-01), Oda et al.
patent: 6724066 (2004-04-01), Swanson et al.
patent: 6770952 (2004-08-01), Babcock et al.
patent: 6838348 (2005-01-01), Babcock et al.
patent: 7001806 (2006-02-01), Tilke et al.
patent: 2002/0158309 (2002-10-01), Swanson et al.
patent: 2003/0094673 (2003-05-01), Dunn et al.
patent: 2004/0048428 (2004-03-01), Tanomura
Gilbert et al., “Quasi-Dielectrically Isolated Bipolar Junction Transistor with Subcollector Fabricated Using Silicon Selective Epitaxy”, IEEE Transactions on Electron Devices, New York, vol. 38, No. 7, Jul. 1991, pp. 1660-1665, (6 pages).
Heinemann et al., “Novel Collector Design for High-Speed SiGe: C HBTs”, International Electron Devices Meeting 2002, Technical Digest, 2002, pp. 775-778, (4 pages).
Algotsson Patrick
Andersson Karin
Norström Hans
Infineon - Technologies AG
Maginot Moore & Beck
Wilczewski M.
LandOfFree
Method for producing vertical bipolar transistors and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing vertical bipolar transistors and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing vertical bipolar transistors and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4104950