Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-09-06
2005-09-06
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S459000, C438S960000
Reexamination Certificate
active
06939782
ABSTRACT:
The invention relates to a method for producing a thin layer (8) containing at least one component (6, 6A,6B) comprising:—a preparation step, wherein an added layer (2, 3, 4) is created on a support (1), at least one part (2) of said layer being adapted for local embrittling and said substrate and the part which can be embrittled being made from different materials and/or having different microstructures; an embrittlement step, wherein a fragile underlayer (5) is produced in the part which can be embrittled; a work step, wherein at least one component (6, 6A,6B) is created on said added layer; and a separation step, wherein a dissociation is induced in the part which can be embrittled, along said fragile underlayer, in order to produce a thin layer (8) comprising a part of said added layer and said component.
REFERENCES:
patent: 5300788 (1994-04-01), Fan et al.
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6127199 (2000-10-01), Inoue et al.
patent: 6271101 (2001-08-01), Fukunaga
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 0 767 486 (1997-04-01), None
patent: 0 786 801 (1997-07-01), None
patent: 1 014 452 (2002-06-01), None
patent: 11-233449 (1999-08-01), None
patent: WO 01/11930 (2001-02-01), None
Aspar Bernard
Clerc Jean-Frederic
Commissariat a l''Energie Atomique
Thai Luan
LandOfFree
Method for producing thin layers on a specific support and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing thin layers on a specific support and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing thin layers on a specific support and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3451252