Method for producing thin layers of semiconductor material...

Details Method for producing thin layers of semiconductor material... Method for producing thin layers of semiconductor material...

2007-11-20

2007-11-20

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000, C257SE21568, C257SE21570

Reexamination Certificate

active

11084748

ABSTRACT:
A method for producing thin layers of a semiconductor material from a donor wafer, which comprises in succession forming a first weakened region in a donor wafer below a first face and at a depth corresponding substantially to the thickness of a first thin layer to be transferred, detaching the first thin layer having upper and lower boundaries defined by the first face and the first weakened region, forming a second weakened region in the donor wafer after detachment of the first thin layer and without conducting an intermediate recycling step, with the second weakened region formed below a second face of the donor wafer and at a depth corresponding substantially to the thickness of a second thin layer to be transferred, and detaching the second thin layer having upper and lower boundaries defined by the second face and the second weakened region. Resultant semiconductor-on-insulator structures are also included.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 5856229 (1999-01-01), Sakaguchi et al.
patent: 6566158 (2003-05-01), Eriksen et al.
patent: 6569748 (2003-05-01), Sakaguchi et al.
patent: 6613678 (2003-09-01), Sakaguchi et al.

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