Method for producing synthetic diamond thin film, the thin film

Details Method for producing synthetic diamond thin film, the thin film Method for producing synthetic diamond thin film, the thin film

1993-12-13

1996-07-02

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Using an energy beam or field, a particle beam or field, or...

117929, 437103, 437113, 437233, C30B 2904

Patent

active

055311849

ABSTRACT:
The present invention provides a method for producing a synthetic diamond thin film which comprises decomposing with microwave a raw material gas containing at least one compound selected from the group consisting of carbon monoxide, carbon dioxide and a hydrocarbon and hydrogen or hydrogen and oxygen to produce a plasma and contacting the plasma with the surface of a substrate held outside the area irradiated with the microwave to form a diamond thin film on the substrate.
The present invention further provides an apparatus for producing a synthetic diamond thin film and a synthetic diamond thin film and devices in which the synthetic diamond thin film is used.

REFERENCES:
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Belton et al. "Loss of Epitaxy During Diamond Film Growth on Ordered Ni(100)" J. Appl. Phys. 66(9) Nov. 1, 1989 pp. 4223-4229.
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Applied Physics Letters, vol. 56, No. 5, 29th Jan. 1990, pp. 437-439 New York, US; Y. Liou et al: "Effect of Oxygen in Diamond Deposition at Low Substrate Temperatures".
Applied Physics Letters, vol. 56, no. 7, 12th Feb. 1990, pp. 620-622 New York, US; Y. H. Lee et al.: "Bias-controlled chemicel vapor deposition of diamond thin films".
Chemical Abstracts, vol. 112, No. 6, 5th Feb. 1990, p. 197, Abstr. No. 39117z, Columbus, Ohio, US; H. Kawarada et al.: "Application of Diamond Thin Films to Light Emitting Devices", & Denshi Zairyo 1989, 28(8), 69-73.
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Journal of Materials Research, vol. 3, No. 6, pp. 1397-1403, D. E. Meyer, et al.

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