Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-03-02
2009-12-08
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S092000, C117S094000, C117S095000, C117S929000
Reexamination Certificate
active
07628856
ABSTRACT:
There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800° C.±60° C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.
REFERENCES:
patent: 5397428 (1995-03-01), Stoner et al.
patent: 5854495 (1998-12-01), Buhaenko et al.
patent: 5863324 (1999-01-01), Kobashi et al.
patent: 5964942 (1999-10-01), Tanabe et al.
patent: 2006/0001029 (2006-01-01), Hayashi et al.
patent: A 5-85892 (1993-04-01), None
patent: A 8-133892 (1996-05-01), None
patent: A 2005-335988 (2005-12-01), None
N. Ishigaki et al., “Observation of Diamond Nucleation During Bias Treatment”, New Diamonds and Frontier Carbon Technology vol. 13, No. 6, 2003, pp. 323-331.
K. Ohtsuka et al., “Epitaxial Growth of Diamond on Iridium”, Jp. J. Appl. Phys. vol. 35, Aug. 1996, pp. 1072-1074.
“New Diamond”, vol. 18, No. 4, 2002, pp. 6-12.
65thJapan Society of Applied Physics Academic Lecture Preliminary Report, No. 2, 2004, p. 508.
Instruction Book: “Chino Inst No. IR-274-P5CE,” May 2005.
Maeda Shintaro
Noguchi Hitoshi
Sawabe Atsuhito
AGD Material Co.
Kunemund Robert M
Oliff & Berridg,e PLC
Shin-Etsu Chemical Co. , Ltd.
LandOfFree
Method for producing substrate for single crystal diamond... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing substrate for single crystal diamond..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing substrate for single crystal diamond... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4132930