Method for producing strained quantum well semiconductor laser e

Details Method for producing strained quantum well semiconductor laser e Method for producing strained quantum well semiconductor laser e

1991-10-17

1992-12-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 437127, H01L 2120

Patent

active

051734478

ABSTRACT:
A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In.sub.x Ga.sub.1-x As strained quantum well layer and a GaAs barrier layer, and clad layers arranged up and down said active layer through an epitaxial growth means. The lattice mismatching rate of the clad layer with respect to the substrate is less than 10.sup.-3.

REFERENCES:
patent: 4804639 (1989-02-01), Yablonovitch
patent: 5039627 (1991-08-01), Menigaux
patent: 5093278 (1992-03-01), Kamei

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