Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2005-02-15
2005-02-15
Nguyen, Ha Tran (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C361S523000, C361S540000
Reexamination Certificate
active
06855177
ABSTRACT:
A method for manufacturing large capacitance solid electrolytic capacitors that can be connected direct with semiconductor component, and offer a superior high frequency characteristic. An aluminum foil3is made porous in one of the surfaces, a dielectric layer2is formed on the porous portion, a through hole4is provided in the aluminum foil3at a certain specific location. An insulation layer5is formed to cover the other surface, viz. non-porous surface, of the aluminum foil3and the inner wall surface of through hole4, a solid electrolytic layer6is provided on the dielectric layer2, and a through hole electrode7is formed in the through hole4, and then a collector layer8is formed on the solid electrolytic layer6. The insulation layer5disposed on aluminum foil3is provided with an opening9at a certain specific location, and a connection terminal10is provided at the opening9of insulation layer5and the exposed surface of the through hole electrode7, respectively.
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Fujii Tatsuo
Kimura Suzushi
Mido Yuji
Miki Katsumasa
Nakano Makoto
Nguyen Ha Tran
Parkhurst & Wendel L.L.P.
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