Method for producing SOI wafer and SOI wafer

Details Method for producing SOI wafer and SOI wafer Method for producing SOI wafer and SOI wafer

2006-08-15

2006-08-15

Luu, Chuong A. (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S404000, C438S042000, C438S458000

Reexamination Certificate

active

07091107

ABSTRACT:
There is disclosed a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by, at least implanting at least one kind of ion of hydrogen ion and a rare gas ion into the surface portion of a bond wafer to form an ion-implanted layer, bonding the bond wafer and a base wafer to each other through an oxide film, and delaminating the resultant bonded wafer at the ion-implanted layer, wherein assuming that X [nm] represents the thickness of the buried oxide film and Y [nm] represents the thickness of the SOI layer in the SOI wafer immediately after delaminating at the ion-implanted layer, when the thickness X of the buried oxide film is X≦100, in forming the ion-implanted layer, the ion implantation is carried out with the ion implantation conditions being set such that the sum X+Y of the thickness of the buried oxide film and the thickness of the SOI layer satisfies X+Y>1500−14X, after which the bonding process and the delaminating process are carried out and, thereafter, a thinning treatment of the SOI layer is carried out to make the SOI layer into a thin film having a predetermined thickness. Thereby, there can be provided a method of producing an SOI wafer capable of producing a high-quality SOI wafer at a high yield without generating any blister and any void.

REFERENCES:
patent: 6140210 (2000-10-01), Aga et al.
patent: 6284629 (2001-09-01), Yokokawa et al.
patent: 6653209 (2003-11-01), Yamagata
patent: A 5-211128 (1993-08-01), None
patent: A-11-307472 (1999-11-01), None

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