Method for producing SOI substrate and semiconductor device usin

Details Method for producing SOI substrate and semiconductor device usin Method for producing SOI substrate and semiconductor device usin

1994-04-13

1996-06-11

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 67, 117923, 117935, 117951, H01L 2120

Patent

active

055255361

ABSTRACT:
A SOI substrate has a first insulating film formed on a semiconductor substrate. A first opening is formed thereon and a dummy layer is formed on the first opening and the first insulating film. A second opening is formed in the dummy layer and a second insulating film is formed and the dummy layer is removed by etching through the third opening to form a cavity. A semiconductor crystal layer is epitaxially grown within the cavity with use of the semiconductor substrate as a seed. The second insulating film is then removed from the semiconductor crystal layer.

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Ohshita, Y. "Low temperature and selective growth of .beta.-SiC using the SiH.sub.2 Cl.sub.2 /i-C.sub.4 H.sub.10 /HCl/H.sub.2 gas system," Applied Physics Letters 57(6), 6 Aug. 1990, pp. 605-607.

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