Method for producing single crystal silicon carbide

Details Method for producing single crystal silicon carbide Method for producing single crystal silicon carbide

2008-10-14

2009-12-29

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

C117S011000, C117S063000, C117S951000

Reexamination Certificate

active

07637998

ABSTRACT:
Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm2or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.

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