Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2004-05-21
2008-10-28
Kunemund, Robert M. (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S087000, C117S088000, C117S092000, C117S093000, C117S094000, C117S104000, C428S448000, C428S450000, C428S697000
Reexamination Certificate
active
07442252
ABSTRACT:
The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am−1BmO3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb.A flux layer, containing a composition satisfying the inequality 0<CuO/Bi2O3<2 and/or 0≦TiO/Bi2O3<7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer. A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown. A CuO flux layer is deposited on a wafer and Bi—Ti—O is supplied to the flux layer using a Bi6Ti3O12, Bi7Ti3O12, or Bi8Ti3O12target of which the Bi content is greater than that of an object film such that a Bi4Ti3O12single-crystalline thin-film is formed above the wafer.
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29p-F-17, Fabrication and Characterization of Bi4Ti3O12Thin Film by Tri-phase-epitaxy.
Koinuma Hideomi
Matsumoto Yuji
Takahashi Ryota
Japan Science and Technology Agency
Kunemund Robert M.
Rao G. Nagesh
Westerman, Hattori, Daniels & Adrian , LLP.
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