Method for producing single crystal films

Coating processes – Magnetic base or coating – Magnetic coating

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427248, C23C 1108, H01F 134

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active

039820491

ABSTRACT:
The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.

REFERENCES:
patent: 3386852 (1968-06-01), Mee et al.
patent: 3429740 (1969-02-01), Mee
patent: 3486937 (1969-12-01), Unares
"Epitaxial Ferrite Memory Planes", by G. R. Polliam et al, Proceeding Nat'l Aerospace Electronics Conference, (Dayton, Ohio 1965), pp. 241-245.
"Chem. Vapor Deposition of Single Crystals Metal Oxides II, Encapsulation of Polycrystalline Conductors in Single Crystal Ferrite", by J. L. Arcner et al, presented at International Conference on Crystal Growth, June 1966.
"Magnetic Oxide Films", by J. E. Mee et al, IEEE Transactions on Magnetics, vol. MAG-S, No. 4, Dec. 1969, pp. 717-727.

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