Method for producing single crystal, and needle-like single crys

Details Method for producing single crystal, and needle-like single crys Method for producing single crystal, and needle-like single crys

1995-04-14

1996-08-13

Garrett, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Forming a platelet shape or a small diameter, elongate,...

117 75, 117921, C30B 2504

Patent

active

055446175

ABSTRACT:
A method for producing a single crystal, which comprises (1) placing a metal layer as a pattern at a desired position on the surface of a single crystal substrate, (2) etching the surface of the single crystal substrate around the pattern, and (3) in a raw material gas atmosphere containing an element or elements constituting the single crystal, taking the element or elements in the metal layer at the pattern and permitting a needle-like single crystal to grow perpendicularly.

REFERENCES:
patent: 3721732 (1973-03-01), Fenberg et al.
patent: 4155781 (1979-05-01), Diepers
patent: 4888084 (1989-12-01), Nixdorf et al.
patent: 5160574 (1992-11-01), Pearson et al.
patent: 5314569 (1994-05-01), Pribat et al.
Zaima et al, J. Phys. D: Appl. Phys., vol. 13, pp. L47-49 (1980).

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