Method for producing single crystal, and needle-like single crys

Details Method for producing single crystal, and needle-like single crys Method for producing single crystal, and needle-like single crys

1995-04-19

1997-12-30

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of silicon containing

428450, 428469, 428472, 428689, 428699, 428700, 117 54, 117 75, 117954, B32B 904

Patent

active

057028222

ABSTRACT:
A method for producing a single crystal, which comprises (1) placing a metal layer as a pattern at a desired position on the surface of a single crystal substrate, (2) etching the surface of the single crystal substrate around the pattern, and (3) in a raw material gas atmosphere containing an element or elements constituting the single crystal, taking the element or elements in the metal layer at the pattern and permitting a needle-like single crystal to grow perpendicularly.

REFERENCES:
patent: 3635753 (1972-01-01), Arthur, Jr.
patent: 5314569 (1994-05-01), Pribat
Applied Physics Letters, vol. 4, No. 5 (1969), R.S. Wagner, et al. "Vapor-Liquid-Solid Mechanism of Single Crystal Growth".
"The Vapor-Liquid-Solid Mech. of Crystal Growth and Its Application to Silicon", Trans. Met. Soc. of AIME, 223 (1965) 1053-1064.
"Regular Arrays of LaB.sub.6 Whiskers . . . ", J. Less-Common Metals, 117 (1986), 97-103.
"Controlled Growth of LaB.sub.6 Whiskers . . . ", J Crys. Growth, 51 (1981) 190-194.

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