Method for producing silicon wafer and silicon wafer

Details Method for producing silicon wafer and silicon wafer Method for producing silicon wafer and silicon wafer

2008-04-22

2008-04-22

Hiteshew, Felisa (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

C117S014000, C117S015000, C117S042000

Reexamination Certificate

active

07361219

ABSTRACT:
The present invention are a method for producing a silicon wafer having a crystal orientation <110> from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be dislocation-free by Dash Necking method using a seed crystal having its crystal axis inclined at a specified angle from a crystal orientation <110>, and the grown FZ silicon single crystal ingot is sliced at the just angle of a crystal orientation <110> to produce a silicon wafer having a crystal orientation <110>, and a silicon wafer produced by the method. Thereby, there are provided a method for producing a silicon wafer having a crystal orientation <110> from a silicon single crystal ingot made to be dislocation-free at a high success rate by using Dash Necking method by FZ method, and a silicon wafer having an crystal orientation <110>.

REFERENCES:
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patent: A 2002-025874 (2002-01-01), None
Dyer, “Dislocation-Free Czochralski Growth of <110> Silicon Crystals,” Journal of Crystal Growth, vol. 47, pp. 533-540 {1979}.
Murthy, “Growth of Dislocation-Free Silicon Crystals in the <110 > Direction for Use as Neutron Monochromators,” Journal of Crystal Growth, vol. 52, pp. 391-395 {1981}.

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