Method for producing silicon tip field emitter arrays

Details Method for producing silicon tip field emitter arrays Method for producing silicon tip field emitter arrays

1994-11-07

1995-10-17

Rosenbaum, Mark

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, H01J 130, H01J 902

Patent

active

054585180

ABSTRACT:
The present invention provides for a method for manufacturing a field emitter array comprising the steps of depositing a silicon nitride mask pattern layer on the silicon substrate, forming a porous silicon layer in the substrate except in parts under the nitride mask patterns and oxidizing the porous silicon layer and the silicon substrate under the silicon layer, which results in formation of cone shape cathode tips. Further, gates corresponding to said cathode tips are provided by the conventional process or by process of depositing thin metal film and photoresist on the mask patterns and the porous silicon layer, etching the photoresist layer on the patterns, and then etching the metal film on the patterns, or by lift-off process.

REFERENCES:
patent: 5228878 (1993-07-01), Komatsu
patent: 5389026 (1995-02-01), Fukuta et al.

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