Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2006-04-19
2008-10-28
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S015000, C117S017000, C117S023000, C117S932000
Reexamination Certificate
active
07442251
ABSTRACT:
This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single crystal and has an inner contour that is coaxial with a pull axis, wherein an ambient gas in which the silicon single crystal is grown includes a hydrogen-atom-containing substance in gaseous form. This silicon single crystal is produced by the above method.
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Hamada Ken
Inami Shuichi
Murakami Hiroki
Nakamura Tsuyoshi
Takase Nobumitsu
Kunemund Robert M
Pillsbury Winthrop Shaw & Pittman LLP
Sumco Corporation
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