Method for producing silicon single crystal having no flaw

Details Method for producing silicon single crystal having no flaw Method for producing silicon single crystal having no flaw

2005-03-22

2005-03-22

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S015000, C117S201000, C117S202000, C117S217000

Reexamination Certificate

active

06869478

ABSTRACT:
A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.

REFERENCES:
patent: 08-330316 (1996-12-01), None
patent: 11-079889 (1999-03-01), None
patent: 11-199386 (1999-07-01), None
patent: 11-199387 (1999-07-01), None
patent: 2000-072590 (2000-07-01), None

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