Method for producing silicon single crystal and silicon...

Details Method for producing silicon single crystal and silicon... Method for producing silicon single crystal and silicon...

2006-07-24

2008-11-25

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S048000, C438S057000, C438S463000, C257SE47003, C257SE43004, C257SE31001

Reexamination Certificate

active

07456082

ABSTRACT:
In a method for producing a silicon single by pulling the silicon single crystal from a silicon melt contained in a crucible, a magnetic field is applied to the silicon melt in a radial direction of the silicon single crystal, and a vertical level of a center of the magnetic field relative to a surface of the silicon melt is controlled such that a thermal gradient in an axial direction of the crystal is maintained at a constant value in respective portions along a radial direction of the silicon single crystal.

REFERENCES:
patent: 5556461 (1996-09-01), Kimura et al.
patent: 6334896 (2002-01-01), Iida et al.
patent: 2003/0041796 (2003-03-01), Nakamura et al.
patent: 64-024090 (1989-01-01), None
patent: 2000-154093 (2000-06-01), None

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