Method for producing silicon single crystal

Details Method for producing silicon single crystal Method for producing silicon single crystal

1998-09-29

2000-08-29

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 18, 117 30, 117 33, C30B 1520

Patent

active

061102725

ABSTRACT:
A method of loading a crucible, comprises loading at least one polycrystalline silicon rod into the crucible. Lump and/or granular polycrystalline silicon may also be loaded into the crucible. Especially when loaded into the crucible in a close-packed pyramidal configuration, a high loading density is achieved.

REFERENCES:
patent: 5462010 (1995-10-01), Takano et al.
patent: 5588993 (1996-12-01), Holder
patent: 5814148 (1998-09-01), Kim et al.
patent: 5902395 (1999-05-01), Nagai et al.
patent: 5919303 (1999-07-01), Holder

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