Method for producing silicon nitride layers

Details Method for producing silicon nitride layers Method for producing silicon nitride layers

1986-07-24

1988-01-05

Pianalto, Bernard D.

Coating processes

Electrical product produced

Welding electrode

427 541, 427 55, 427344, B05D 306

Patent

active

047176024

ABSTRACT:
A silicon nitride layer is formed on a substrate by reacting (1) silicon fluoride, (2) nitrogen or nitrogen hydride and (3) nitrogen fluoride by a chemical vapor deposition method using thermal energy and/or optical energy.
According to the invention process, fluorine is added to the silicon nitride layer to make Si--F bonds, by which the amount of Si--H bonds can be reduced less than 1/10 as compared with that of silicon nitride made by the conventional reaction between SiH.sub.4 and HN.sub.3. Silicon nitride layer according to the invention will highly enhance the reliability of IC, LSI.

REFERENCES:
patent: 4181751 (1980-01-01), Hall et al.
patent: 4461783 (1984-07-01), Yamazaki et al.
patent: 4485121 (1984-11-01), Matsumura
patent: 4495218 (1985-01-01), Azuma et al.

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