Method for producing silicon nitride layer

Details Method for producing silicon nitride layer Method for producing silicon nitride layer

1985-03-11

1987-11-03

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

B05D 306

Patent

active

047043008

ABSTRACT:
A silicon nitride layer is formed on a substrate by reacting (1) a silicon fluoride, (2) nitrogen or nitrogen hydride and (3) a nitrogen fluoride by a plasma chemical vapor deposition (thermal energy and electronic energy are applied) process.
According to the invention, fluorine is added in the silicon nitride layer to produce a Si-F coupling and thus it is made possible to reduce a concentration of hydrogen in the silicon nitride film.
It is also possible to make a concentration of oxygen in the silicon nitride layer less than 1/10 of that of the conventional silicon nitride.

REFERENCES:
patent: 4181751 (1980-01-01), Hall et al.
patent: 4485121 (1984-11-01), Matsumura
patent: 4495218 (1985-01-01), Azuma et al.

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