Method for producing silicon nitride based member coated with fi

Details Method for producing silicon nitride based member coated with fi Method for producing silicon nitride based member coated with fi

1995-05-30

1997-05-06

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

427255, 4272551, 4272557, 427575, 427577, C23C 1626, B05D 306

Patent

active

056269080

ABSTRACT:
Method for coating a substrate formed of a sintered silicon nitride based material with a film of diamond by a gas phase synthesis technique including a first step of applying a film having a thickness of 0.5 to 2.0 .mu.m at a temperature not higher than a temperature at which grain boundary components of the substrate volatilize, and a second step of synthesizing the film of diamond-and-the-like to a thickness of 5 to 100 .mu.at a temperature which expedites synthesis of the film of diamond.

REFERENCES:
patent: 5006203 (1991-04-01), Purdes
patent: 5028451 (1991-07-01), Ito et al.
patent: 5200231 (1993-04-01), Bachmann et al.
patent: 5242711 (1993-09-01), DeNatale et al.
patent: 5271971 (1993-12-01), Herb et al.
Toshimichi Ito et al., "Diamond Synthesis by the Microwave Plasma CVD Method Using a Mixture of Carbon Monoxide and Hydrogen Gas," Science and Technology of New Diamond, pp. 107-109, KTK Scientific Publishers, 1990.

Affiliated with

Also associated with

Rating

Method for producing silicon nitride based member coated with fi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing silicon nitride based member coated with fi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing silicon nitride based member coated with fi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2130761