Method for producing silicon-imide

Details Method for producing silicon-imide Method for producing silicon-imide

1986-04-24

1989-01-03

Bond, Robert T.

Chemistry of inorganic compounds

Silicon or compound thereof

346 2, 346 3, 346 14, 423344, C01B 21082, C01B 21068

Patent

active

047956224

ABSTRACT:
A silicon halide, preferably SiCl.sub.4, is reacted with an excess of a base, e.g. a Lewis base or Bronsted base with steric hindrance group to produce an adduct. The adduct, which need not be separated, is treated with ammonia gas to produce the imide of silicon. A light organic solvent is used. The temperature used is -78.degree. C. to 100.degree. C. and the reaction is rapid.
Byproduct ammonium halide is removed, and the imide is heated at 1000.degree. C. to 1600.degree. C. in an oven in an atmosphere containing nitrogen, to produce silicon nitride of good sintering characteristics and more than 70 wt % of which is of the .alpha.-crystal form.

REFERENCES:
patent: 3565936 (1971-02-01), Morehouse
patent: 4387079 (1983-06-01), Kasai et al.
patent: 4663314 (1987-05-01), Hayase et al.
patent: 4670423 (1987-06-01), Boshagen et al.

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