Method for producing silicon dioxide/polycrystalline silicon int

Coating processes – Electrical product produced – Condenser or capacitor

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427 93, 4272554, 4272557, 427255, 4272481, 427300, 427350, 427377, B05D 512

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043418180

ABSTRACT:
The efficient production of sequential layers of silicon dioxide and polycrystalline silicon is possible using a specific set of reaction steps. This set of reaction steps includes the oxidation of silicon at low oxygen pressure and at temperatures of the magnitude of 900 degrees C., followed by the deposition of polycrystalline silicon at substantially the same temperature utilizing a dichloride silane chemical vapor deposition (CVD) process.

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Vassen et al., J. Vacuum Sci. and Technology, 11, 60 (1979).

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