Method for producing silicon carbide single crystal

Details Method for producing silicon carbide single crystal Method for producing silicon carbide single crystal

2006-06-16

2011-11-08

Kunemund, Bob M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S056000

Reexamination Certificate

active

08052793

ABSTRACT:
A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing Si and C, and growing a silicon carbide single crystal on the substrate, the method including performing a cycle comprising the following steps (a) and (b):a) a step of bringing the seed crystal substrate into contact with the surface of the melt, growing a single crystal, and separating the seed crystal substrate from the surface of the melt thereby interrupting the growth of the single crystal, andb) a step of bringing the seed crystal substrate into contact with the surface of the melt and growing a single crystal, at least one time, wherein the seed crystal is a 6H-silicon carbide single crystal or a 15R-silicon carbide single crystal and the resulting single crystal is a 4H-silicon carbide single crystal.

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