Method for producing silicon carbide single crystal

Details Method for producing silicon carbide single crystal Method for producing silicon carbide single crystal

2011-08-09

2011-08-09

Pert, Evan (Department: 2826)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S058000, C117S106000, C117S902000, C117S915000, C117S951000

Reexamination Certificate

active

07993453

ABSTRACT:
A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, using the third seed crystal to grow thereon a third SiC single crystal, and cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal. The method enables the crystal to be enlarged efficiently without impairing crystallinity.

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