Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Patent
1998-01-27
1999-10-19
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
117 68, 117 79, 117952, 423345, C30B 710
Patent
active
059682655
ABSTRACT:
A method for producing cubic SiC monocrystals includes dissolving SiC powder or other starting material in a solvent at high overpressures and growing the monocrystals on a seed crystal.
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Rupp Roland
Stein Rene
Volkl Johannes
Greenberg Laurence A.
Kunemund Robert
Lerner Herbert L.
Siemens Aktiengesellschaft
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