Method for producing silicon boronitride layers

Details Method for producing silicon boronitride layers Method for producing silicon boronitride layers

1989-06-16

1991-02-05

Pianalto, Bernard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 47, 427294, 4272552, B05D 302

Patent

active

049903659

ABSTRACT:
To create silicon boronitride layers that are utilized as intermetallization layers and/or as final passivation layers, the present invention provides a method wherein fluid initial compounds that already molecularly contain a part of the target composition of the silicon boronitride layer to be produced are utilized, and deposited through chemical vapor deposition in an alternating electromagnetic field. The silicon boronitride layers produced in this fashion have a dielectric constant whose value is below 4 .epsilon..sub.o and are distinguished by good insulating and blocking properties and by a high break down strength.

REFERENCES:
Maeda et al., Low Dielectric Constant Amorphous SiBN Ternary Films Prepared by Plasma-Enhanced Deposition, Japanese Journal of Applied Physics, vol. 26, No. 5, May, 1987, pp. 660-665.
Mar et al., Properties of Plasma Enhanced CVD Silicon Nitride: Measurements and Interpretations, Solid State Technology, Apr. 1980, pp. 137-142.
Maeda et al., Electrical Properties and their Thermal Stability for Silicon Nitride Films Prepared by Plasma-Enhanced Deposition, J. Appl. Phys., 53(10), Oct. 1982, pp. 6852-6856.
Rand et al., Preparation and Properties of Thin Film Boron Nitride, J. Electrochem. Soc.: Solid State Science, Apr. 1968, pp. 423-429.
Hyder et al., Structure and Properties of Boron Nitride Films Grown by High Temperature Reactive Plasma Deposition, J. Electrochem. Soc.: Solid-State Science and Technology, Nov. 1976, pp. 1721-1724.

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