Method for producing semiconductors

Details Method for producing semiconductors Method for producing semiconductors

1991-01-24

1992-06-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437233, 437234, 148DIG56, 118 50, 118715, 118724, 118733, 427 69, 427 70, 4272481, H01L 2100, H01L 2102, C23C 1646

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active

051186420

ABSTRACT:
A reactant gas is fed to a dispersing chamber which is disposed under a reaction chamber, and both disposed within a vacuum chamber. The reactant gas is dispersed and then fed through a plurality of communicating holes to the reaction chamber. A second reactant gas is fed to a lower dispersing chamber. After dispersion, this second gas is fed through pipes through the first dispersing chamber and into the reaction chamber around the first reaction gas. Said first reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the first reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via communicating holes.

REFERENCES:
patent: 3916822 (1975-11-01), Robinson
patent: 4369031 (1983-01-01), Goldman et al.
patent: 4979465 (1990-12-01), Yoshino et al.
patent: 4989540 (1991-02-01), Fuse et al.
patent: 5029554 (1991-07-01), Mujashita et al.
Patent Abstracts of Japan, vol. 8, No. 221 (E-271)[1658], 1st Oct. 1984; JP-A-59 104 117 (Kogyo Gijutsuin Japan) 15-06-1984.

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