Method for producing semiconductor thin film by melt and recryst

Details Method for producing semiconductor thin film by melt and recryst Method for producing semiconductor thin film by melt and recryst

1990-05-25

1991-02-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437173, 148DIG90, H01L 2120

Patent

active

049923935

ABSTRACT:
A method for producing a semiconductor thin film by melt and recrystallization process. At least one recess is formed in a stacked layered structure including a semiconductor thin film layer. The recess has an arrow head shape seen from a surface side of the layered structure. The apex of the arrow head shape is oriented to a forward direction on a scanning line. The surface of the layered structure is covered with a cooling medium so that the recess is filled with the cooling medium. An energy beam is irradiated to the layered structure through the cooling medium to scan the structure along the scanning line so as to melt the semiconductor thin film and after that the semiconductor is cooled and recrystallized to form a single crystal structure therein.

REFERENCES:
patent: 4751193 (1988-06-01), Myrick
patent: 4822752 (1989-04-01), Sugahara et al.
patent: 4915772 (1990-04-01), Fehlner et al.

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