Method for producing semiconductor substrate

Details Method for producing semiconductor substrate Method for producing semiconductor substrate

2011-07-05

2011-07-05

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21320

Reexamination Certificate

active

07972937

ABSTRACT:
An object of the present invention is to provide a method by which bonding at a low temperature is possible and an amount of metal contaminants in an SOI film is decreased. An embodiment of the present invention is realized in the following manner. A single crystal silicon substrate10surface-activated by a plasma-treatment and a quartz substrate20are bonded together at a low temperature, to which an external impact is given to mechanically delaminate silicon film from a single crystal silicon bulk thereby obtaining a semiconductor substrate (SOI substrate) having a silicon film (SOI film)12. Next, the SOI substrate is subjected to a heat-treatment at a temperature of 600° C. to 1250° C. so that metal impurities accidentally mixed into an interface of the SOI film and the quartz substrate and into the SOI film in such a step as a plasma-treatment are gettered to a surface region of the silicon film12. Then, in the end, a surface layer (gettering layer) of the silicon film12of the SOI substrate after the heat-treatment is removed to finally prepare an SOI film13and a semiconductor substrate (SOI substrate) is obtained.

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A.J. Auberton-Herve et al., “Smart Cut Technology: Industrial Status of SOI Wafer Production and New Material Developments,”Electrochemical Society Proceedings, vol. 99-3, 1999, pp. 93-106.
European Search Report for Application No. 08 01 6060, mailed Oct. 14, 2010.

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