Method for producing semiconductor substrate

Details Method for producing semiconductor substrate Method for producing semiconductor substrate

1995-08-28

1997-12-09

Niebling, John

Fishing, trapping, and vermin destroying

437 86, 437226, 437234, 437974, 1566251, 1566531, 148DIG135, H01L 21465

Patent

active

056960344

ABSTRACT:
A method for producing a semiconductor substrate in which no autodoping occurs and slip dislocations in the substrate are reduced. The method involves forming a silicon nitride film on the backside of an n.sup.- -silicon substrate, epitaxially growing an n.sup.+ -buffer layer and a p.sup.+ -layer on the front side of the n.sup.- -silicon substrate, and decreasing the thickness of the n.sup.- -silicon substrate from the backside.

REFERENCES:
patent: 3462322 (1969-08-01), Hennings et al.
patent: 5426073 (1995-06-01), Imaoka et al.

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