Electrolysis: processes – compositions used therein – and methods – Electrolytic erosion of a workpiece for shape or surface... – With irradiation or illumination
Patent
1995-08-03
1997-11-25
Valentine, Donald R.
Electrolysis: processes, compositions used therein, and methods
Electrolytic erosion of a workpiece for shape or surface...
With irradiation or illumination
205656, 205674, 205684, C25F 312
Patent
active
056908075
ABSTRACT:
The invention provides a method for producing semiconductor particles in which a semiconductor material of the type for which particles are desired is placed in an electrolytic solution of an anodic cell. The anodic cell is configured with a cathode also positioned in the electrolytic solution. The electrolytic solution of the anodic cell includes an etchant and a surfactant that is characterized by an attractive affinity for the semiconductor material. To produce semiconductor particles from the semiconductor material, an electrical potential is applied between the semiconductor material in the electrolytic solution and the cathode in the electrolytic solution to anodically etch the semiconductor material. During the etch process, particles of the semiconductor material form and are encapsulated by the surfactant. This method for producing semiconductor particles uses an uncomplicated apparatus and procedure that results in inexpensive and high-volume production of particles of a semiconductor material.
REFERENCES:
patent: 2871174 (1959-01-01), Turner
patent: 4482443 (1984-11-01), Bacon et al.
patent: 4931692 (1990-06-01), Takagi et al.
patent: 4995954 (1991-02-01), Guilinger et al.
patent: 5139624 (1992-08-01), Searson et al.
patent: 5156885 (1992-10-01), Budd
patent: 5227034 (1993-07-01), Stein et al.
patent: 5358600 (1994-10-01), Canham et al.
patent: 5434878 (1995-07-01), Lawandy
patent: 5442254 (1995-08-01), Jaskie
Reetz et al., "Size-Selective Synthesis of Nanostructured Transition Metal Clusters," J. Am. Chem. Soc., vol. 116, No. 16, pp. 7401-7402, 1994 no month.
Furukawa et al., "Quantum size effects on the optical band gap of microcrystalline Si:H," Phys. Rev. B, vol. 38, No. 8, pp. 5726-5729, Sep. 15, 1988.
DiMaria et al., "Electroluminescence studies in silicon dioxide films containing tiny silicon islands," J. Appl. Phys., vol. 56, No. 2, pp. 401-416, Jul. 15, 1984.
Juen et al., "Technology and photoluminescence of GaAs micro-and nanocrystallites," Super-lattices and Microstructures, vol. 11, No. 2, pp. 181-184, 1992 no month.
Chiu et al., "Gas Phase Synthesis and Processing of Silicon Nanocrystallites: Characterization by Photoluminescence Emission Spectroscopy," Jnl. Elec. Mater., v. 23, N. 4, pp. 347-354, 1994 no month.
Littau et al., "A Luminescent Silicon Nanocrystal Colloid via a High-Temperature Aerosol Reaction," J. Phys. Chem., vol. 97, No. 6, pp. 1224-1230, 1993 no month.
Fojtik et al., "Luminescent colloidal silicon particles," Chemical Physics Letters, vol. 221, pp. 363-367, Apr. 29, 1994.
Zhao et al., "Observation of Direct Transitions in Silicon Nanocrystallites," Jpn. J. Appl. Phys., vol. 33, Part 2, No. 7A, pp. L899-L901, Jul. 1, 1994.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, New York, no month 1983.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, Sunset Beach, CA, no month 1986.
Greef et al., Instrumental Methods in Electrochemistry, John Wiley & Sons, New York, no month 1990.
Lehmann, "The Physics Macropore Formation in Low Doped n-Type Silicon," J. Electrochem. Soc., vol. 140, No. 10, pp. 2836-2843, Oct., 1993.
Koch, "The synthesis and structure of nanocrystalline materials produced by mechanical attrition: a review," Nanostructured Materials, vol. 2, pp. 109-129, 1993.
Schoenfeld et al., "Formation of nanocrystallites in amorphous silicon thin films," Jnl. of Crystal Growth, vol. 142, pp. 268-270, no month 1994.
Bhargava et al., "Doped nanocrystals of semiconductors-a new class of luminescent materials," Journal of Luminescence, vol. 60&61, pp. 275-280, no month 1994.
Reed, "Quantum Dots," Scientific American, pp. 118-123, Jan. 1993.
Arakawa et al. "Fabrication and optical properties of GaAs quantum wires and dots by MOCVD selective growth," Semicond. Sci. Technol., vol. 8, pp. 1082-1088, no month 1993.
Chen et al., "Novel fabrication method for nanometer-scale silicon dots and wires," Appl. Phys. Letters, vol. 62, No. 16, pp. 1949-1951, Apr. 19, 1993.
Tamir et al., "Laser induced deposition on nanocrystalline Si with preferred crystallographic orientation," Applied Surface Science, vol. 86, pp. 514-520, no month 1995.
Ahern Brian S.
Clark, Jr. Harry R.
Lober Theresa A.
Massachusetts Institute of Technology
Valentine Donald R.
LandOfFree
Method for producing semiconductor particles does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing semiconductor particles, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor particles will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2103644