Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Reexamination Certificate
2008-04-14
2011-10-18
Culbert, Roberts (Department: 1716)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
C216S024000, C438S745000
Reexamination Certificate
active
08038893
ABSTRACT:
To grasp a removable particle contamination and appropriately removing a particle contamination exposing from a surface of a semiconductor layer, this production method of the semiconductor optical device includes a surface treatment step in which particle contaminations removed from a surface of a cap layer5by etching are limited to particle contaminations A1, C2higher than the thickness of a resist layer22formed on the surface of the cap layer5. Therefore, the heights of removable particle contaminations can be preliminarily grasped based on the thickness of the resist layer22formed, whereby the particle contaminations exposing from the surface of the cap layer5can be appropriately removed by etching just enough. By repeating steps S11-S17while changing the thickness of the resist layer22, it is feasible to prevent unnecessary etching of a wafer and to remove the particle contaminations more completely.
REFERENCES:
patent: 2005/0186800 (2005-08-01), Brewer
patent: 9-51143 (1997-02-01), None
Culbert Roberts
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
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